Semiconductor image sensor

ABSTRACT

A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to aligned with the isolation structure.

PRIORITY DATA

This patent claims the benefit of U.S. Provisional Patent ApplicationSer. No. 62/579,461 filed Oct. 31, 2017, the entire disclosure of whichis hereby incorporated by reference.

BACKGROUND

Digital cameras and other imaging devices employ images sensors. Imagesensors convert optical images to digital data that may be representedas digital images. An image sensor includes an array of pixel sensorsand supporting logic circuits. The pixel sensors of the array are unitdevices for measuring incident light, and the supporting logic circuitsfacilitate readout of the measurements. One type of image sensorcommonly used in optical imaging devices is a back side illumination(BSI) image sensor. BSI image sensor fabrication can be integrated intoconventional semiconductor processes for low cost, small size, and highintegration. Further, BSI image sensors have low operating voltage, lowpower consumption, high quantum efficiency, low read-out noise, andallow random access.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 2 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 3 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 4 is a cross-sectional view of the pixel sensor of the BSI imagesensor taken along line A-A′ of FIGS. 1-3.

FIG. 5 is a cross-sectional view of a portion of a BSI image sensoraccording to aspects of the present disclosure in some embodiments.

FIG. 6 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 7 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 8 is a plan view of a pixel sensor of a BSI image sensor accordingto aspects of the present disclosure in one or more embodiments.

FIG. 9 is a cross-sectional view of the pixel sensor of the BSI imagesensor taken along line B-B′ of FIGS. 6-8.

FIG. 10 is a cross-sectional view of a portion of a BSI image sensoraccording to aspects of the present disclosure in some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of elements and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper”, “on” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the terms such as “first”, “second” and “third” describevarious elements, components, regions, layers and/or sections, theseelements, components, regions, layers and/or sections should not belimited by these terms. These terms may be only used to distinguish oneelement, component, region, layer or section from another. The termssuch as “first”, “second” and “third” when used herein do not imply asequence or order unless clearly indicated by the context.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation of lessthan or equal to ±10% of that numerical value, such as less than orequal to ±5%, less than or equal to ±4%, less than or equal to ±3%, lessthan or equal to ±2%, less than or equal to ±1%, less than or equal to±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, two numerical values can be deemed to be “substantially” thesame or equal if a difference between the values is less than or equalto ±10% of an average of the values, such as less than or equal to ±5%,less than or equal to ±4%, less than or equal to ±3%, less than or equalto ±2%, less than or equal to ±1%, less than or equal to ±0.5%, lessthan or equal to ±0.1%, or less than or equal to ±0.05%. For example,“substantially” parallel can refer to a range of angular variationrelative to 0° that is less than or equal to ±10°, such as less than orequal to ±5°, less than or equal to ±4°, less than or equal to ±3°, lessthan or equal to ±2°, less than or equal to ±1°, less than or equal to±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. Forexample, “substantially” perpendicular can refer to a range of angularvariation relative to 90° that is less than or equal to ±10°, such asless than or equal to ±5°, less than or equal to ±4°, less than or equalto ±3°, less than or equal to ±2°, less than or equal to ±1°, less thanor equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to±0.05°.

BSI image sensor includes an array of pixel sensors. Typically, BSIimage sensors include an integrated circuit having a semiconductorsubstrate and light-sensing devices such as photodiodes corresponding tothe pixel sensors arranged within the substrate, a back-end-of-line(BEOL) metallization of the integrated circuits disposed over a frontside of the substrate, and an optical stack including color filters andmicro-lens corresponding to the pixel sensors disposed over a back sideof the substrate. As the size of BSI image sensors decrease, BSI imagesensors face a number of challenges. One challenge with BSI imagesensors is cross talk between neighboring pixel sensors As BSI imagesensors become smaller and smaller, distance between neighboring pixelsensors becomes smaller and smaller, thereby increasing the likelihoodof cross talk. Another challenge with BSI image sensors is lightcollection. Also as image sensors become smaller and smaller, thesurface area for light collection becomes smaller and smaller, therebyreducing the sensitivity of pixel sensors. This is problematic for lowlight environments. Therefore, it is in need to reduce cross talk and toincrease absorption efficiency of the pixel sensors such thatperformance and sensitivity of BSI image sensors is improved.

The present disclosure therefore provides a BSI image sensor including areflective grid surrounding and separating the pixel sensors. Thus,light is directed and reflected to the pixel sensor instead of enteringto the neighboring pixel sensors. In other words, cross talk is reducedand light is trapped in the pixel sensors, thus performance andsensitivity of the pixel sensors are both improved.

FIGS. 1 through 3 are plan views of a pixel sensor 110 of a BSI imagesensor 100 according to aspects of the present disclosure in someembodiments, FIG. 4 is a cross-sectional view of the pixel sensor 110 ofthe BSI image sensor 100 taken along line A-A′ of FIGS. 1-3, and FIG. 5is a cross-sectional view of a portion of the BSI image sensor 100according to aspects of the present disclosure in some embodiments. Itshould be easily understood that same elements in FIGS. 1-5 aredesignated by the same numerals. As shown in FIGS. 1 through 4, the BSIimage sensor 100 includes a substrate 102, and the substrate 102includes, for example but not limited to, a bulk semiconductor substratesuch as a bulk silicon (Si) substrate, or a silicon-on-insulator (SOI)substrate. The substrate 102 has a front side 102F and a back side 102Bopposite to the front side 102F. The BSI image sensor 100 includes aplurality of pixel sensors 110 typically arranged within an array, andeach of the pixel sensors 110 includes a light-sensing device such as aphotodiode 112 disposed in the substrate 102. In other words, the BSIimage sensor 100 includes a plurality of photodiodes 112 correspondingto the pixel sensors 110. The photodiodes 112 are arranged in rows andcolumns in the substrate 102, and configured to accumulate charge (e.g.electrons) from photons incident thereon. Further, logic devices, suchas transistor 114, can be disposed over the substrate 102 on the frontside 102F and configured to enable readout of the photodiodes 112. Thepixel sensors 110 are disposed to receive light with a predeterminedwavelength. Accordingly, the photodiodes 112 can be operated to sensevisible light of incident light in some embodiments. Or, the photodiodes112 can be operated to sense infrared (IR) and/or near-infrared (NIR) ofthe incident light in some embodiments.

An isolation structure 120 such as a deep trench isolation (DTI)structure is disposed in the substrate 102 as shown in FIGS. 1A and 1B.In some embodiments, the DTI structure 120 can be formed by thefollowing operations. For example, a first etch is performed from theback side 102B of the substrate 102. The first etch results in aplurality of deep trenches (not show) surrounding and between thelight-sensing regions 112. An insulating material such as silicon oxide(SiO) is then formed to fill the deep trenches using any suitabledeposition technique, such as chemical vapor deposition (CVD). In someembodiments, at least sidewalls of the deep trenches are lined by acoating 122 (shown in FIG. 4) and the deep trenches are filled up by aninsulating material 124 (shown in FIG. 4). The coating 122 may include ametal such tungsten (W), copper (Cu), or aluminum-copper (AlCu), or ananti-reflection material, which has a refractive index (n) less thansilicon, but the disclosure is not limited to this. In some embodiments,the insulating material 124 filling the deep trenches can include thelow-n insulating material. A planarization is then performed to removesuperfluous insulating material, thus the surface of the substrate 102on the back side 102B is exposed, and the DTI structure 120 surroundingand between the photodiodes 112 is obtained as shown in FIGS. 1-5. TheDTI structure 120 provides optical isolation between neighboring pixelsensors 110 and photodiodes 112, thereby serving as a substrateisolation grid and reducing cross-talk.

A back-end-of-line (BEOL) metallization stack 130 is disposed over thesubstrate 102 on the front side 102F. The BEOL metallization stack 130includes a plurality of metallization layers including conductivecontacts/vias 132 and conductors 134 stacked in an interlayer dielectric(ILD) layer 136 (all shown in FIGS. 4-5). One or more contacts 132 ofthe BEOL metallization stack 130 is electrically connected to the logicdevices, and one or more conductive vias 132 is electrically connectedto the conductors 134 of different layers. In some embodiments, the ILDlayer 136 can include a low-k dielectric material (i.e., a dielectricmaterial with a dielectric constant less than 3.9) or an oxide, but thedisclosure is not limited to this. The plurality of metallization layers132/134 may include a metal such as Cu, W, or Al, but the disclosure isnot limited to this. In some embodiments, another substrate (not shown)can be disposed between the metallization structure 130 and externalconnectors such as a ball grid array (BGA) (not shown). And the BSIimage sensor 100 is electrically connected to other devices or circuitsthrough the external connectors, but the disclosure is not limited tothis.

Referring to FIGS. 1-4, each pixel sensor 110 of the BSI image sensor100 includes a plurality of conductive structures 142. The conductivestructures 142 are disposed in the dielectric layer 136 of theinterconnection structure 130. The conductive structures 142 arearranged to align with the isolation structure 120. For example, theconductive structures 142 overlap the isolation structure 120 in a planview as shown in FIGS. 1-3. In some embodiments, the conductivestructures 142 entirely overlap the isolation structure 120 as shown inFIGS. 1-4. In some embodiments, at least a portion of the conductivestructures 142 overlap the isolation structure 120. In some embodiments,the conductive structures 142 include conductive contacts, and theconductive contacts and the conductive contacts 132 of theinterconnection structure 130 are formed in the same layer. In someembodiments, the conductive structures 142 and those conductive contacts132 can include the same material, but the disclosure is not limited tothis. In some embodiment, those conductive contacts 132 are formed inthe lowest portion of the dielectric layer 136 and electricallyconnected to the pixel sensors 110, therefore those conductive contacts132 are referred to as the zeroth (V0) vias in the interconnectionstructure 130. Thus the conductive structures 142 can be referred to asthe V0 vias in some embodiments, but the disclosure is not limited tothis. In some embodiments, the conductive structures 142 land on theisolation structure 120 and are in contact with the isolation structure120, as shown in FIG. 4.

Referring to FIGS. 1 and 4, in some embodiments, the conductivestructures 142 includes discrete dot-like structures 142 a disposed inthe interconnection structure 130, as shown in FIG. 1. In someembodiments, each of the dot-like conductive structures 142 a includes adiameter D, and the diameter D is less than a width Wd of the isolationstructure 104 as shown in FIG. 4. For example but not limited to, thediameter D of the dot-like conductive structures 142 a is between about0.05 micrometer (μm) and about 0.2 μm. Further, the dot-like conductivestructures 142 a are spaced apart from each other by the dielectriclayer 136, and a spacing distance S is defined between the adjacentconductive structures 142 a. In some embodiments, a ratio of the spacingdistance S over the diameter D of the dot-like conductive structures 142a is between 1.5 and 2.5, but the disclosure is not limited to this.Further, as mentioned above, the pixel sensor 110 is disposed to receivelight with a predetermined wavelength, and the spacing distance S isless than a half of the predetermined wavelength. For example but notlimited to, when the pixel sensor 110 is operated to sense NIR of theincident light, which includes a wavelength in a range of about 0.75μm-1.4 μm, the spacing distance S can be in a range of about 0.11 μm-0.7μm. In some embodiments, the spacing distance S can be about 0.5 μm, butthe disclosure is not limited to this.

Referring to FIGS. 2 and 4, in some embodiments, the conductivestructures 142 includes discrete bar-like structures 142 b disposed inthe interconnection structure 130, as shown in FIG. 2. In someembodiments, each of the bar-like conductive structures 172 b includes awidth W1, and the width W1 is less than the width Wd of the isolationstructure 120 as shown in FIG. 4. In some embodiments, the width W1 ofthe bar-like conductive structures 142 b is greater than 0.05 μm. Insome embodiments, the width W1 of the bar-like conductive structures 142b is between about 0.05 μm and about 0.2 μm, but the disclosure is notlimited to this. Further, the bar-like conductive structures 142 b arespaced apart from each other by the dielectric layer 136, and a spacingdistance S is defined between the adjacent conductive structures 142 b.As mentioned above, the pixel sensor 110 is disposed to receive lightwith a predetermined wavelength, and the spacing distance S is less thana half of the predetermined wavelength. For example but not limited to,when the pixel sensor 110 is operated to sense NIR of the incidentlight, the spacing distance S can be in a range of about 0.11 μm-0.7 μm.In some embodiments, the spacing distance S can be about 0.5 μm, but thedisclosure is not limited to this. Additionally, the bar-like conductivestructures 142 b can include a length, and the length is less than alength of the isolation structure 120 in the plan view, as shown in FIG.2.

Referring to FIGS. 3 and 4, in some embodiments, the conductivestructures 142 includes bar-like structures disposed in theinterconnection structure 130. Further, the conductive structures 142are in contact with each other to form a frame-like structure 142 c asshown in FIG. 3. In some embodiments, the frame-like conductivestructures 142 c includes a width W1, and the width W1 is less than thewidth Wd of the isolation structure 120 as shown in FIG. 4. In someembodiments, a width W1 of the frame-like conductive structures 142 c isgreater than 0.05 μm. In some embodiments, the width W1 of theframe-like conductive structures 142 c is between about 0.05 μm andabout 0.2 μm, but the disclosure is not limited to this.

Still referring to FIGS. 1-4, each of the pixel sensors 110 furtherincludes a conductor 144 disposed in the dielectric layer 136 of theinterconnection structure 130. In some embodiments, the conductor 144 isarranged to align with the isolation structure 120. As shown in FIGS.1-3, the conductor 144 can overlap both of the conductive structures 142and the isolation structure 120 in a plan view. In some embodiments, theconductor 144 entirely overlaps the conductive structures 142 and theisolation structure 120 as shown in FIGS. 1-4. In some embodiments, atleast a portion of the conductor 144 overlaps the conductive structures142 and the isolation structure 120. In some embodiments, the conductor144 and some of the conductors 134 of the interconnection structure 130are formed in the same layer. In some embodiments, the conductor 144 andthe conductors 134 can include the same material, but the disclosure isnot limited to this. In some embodiment, those conductors 134 are thebottom features immediately over the V0 vias and electrically connectedto the V0 vias, therefore those conductors 134 are referred to as thefirst metal (M1) features in the interconnection structure 130. Thus theconductor 144 can be referred to as the M1 features in some embodiments,but the disclosure is not limited to this. The conductor 144 includes awidth W2, and the width W2 can be between about 0.03 μm and about 0.1μm, but the disclosure is not limited to this.

As shown in FIG. 4, the conductive structures 142 are all disposedbetween the isolation structure 120 and the conductor 144. Moreimportantly, the conductor 144 and the conductive structures 142 form afirst reflective structure 140 disposed in the interconnection structure130. The first reflective structure 140 is arranged to align with theisolation structure 120, as shown in FIGS. 1-4. For example but notlimited to, in some embodiments, the first reflective structure 140 canentirely overlap the isolation structure 120 in the plan view. Further,since the diameter D or the width W1 of the conductive structures 142 isless than the width W2 of the conductor 144, the width of the firstreflective structure 140 is less than the width Wd of the isolationstructure 120. In some embodiments, the first reflective structure 140is electrically isolated from other elements, but the disclosure is notlimited to this.

In some embodiments, each of the pixel sensors 110 includes a pluralityof micro structures 116 disposed over the back side 102B of thesubstrate 102 as shown in FIG. 4. In some embodiments, the microstructures 116 can be formed by following operations. A mask layer (notshown) is disposed over the surface of the substrate 102 on the backside 102B, and followed by forming a patterned photoresist (not shown)over the mask layer. The substrate 102 is then etched through thepatterned photoresist and the mask layer from the back side 102B, andthus the plurality of micro structures 116 is formed over the back side102B of the substrate 102 within each of the pixel sensors 110. Then thepatterned photoresist and the mask layer are removed. In someembodiments, further operations such as a wet etch, can be taken. As aresult, upper and lower portions of the micro structures 116 are taperedor rounded to obtain a wave pattern as shown in FIG. 4. In someembodiments, the micro structures 116 can be continuous structures andinclude a wave profile as shown in FIG. 4. In some embodiments, themicro structures 116 can include discrete structure spaced apart fromeach other by the substrate 102.

In some embodiments, an anti-reflective coating (ARC) 118 a and adielectric layer 118 b are disposed over the micro structures 130 on theback side 102B of the substrate 102. As shown in FIG. 4, surfaces of themicro structures 116 are lined by the conformally formed ARC 118 a. Thedielectric layer 118 b fills spaces between the micro structures 116 andprovides a substantially even surface over the back side 102B of thesubstrate 102. In some embodiments, the dielectric layer 118 b caninclude, for example, an oxide such as silicon dioxide, but thedisclosure is not limited to this.

In some embodiments, a plurality of color filters 150 (shown in FIG. 4)corresponding to the pixel sensors 110 is disposed over the pixelsensors 110 on the back side 102B of the substrate 102. Further, a low-nstructure 160 is disposed between the color filters 150 in someembodiments. In some embodiments, the low-n structure 160 includes agrid structure and the color filters 160 are located within the grid.Thus the low-n structure 160 surrounds each color filter 150, andseparates the color filters 150 from each other as shown in FIG. 4. Thelow-n structure 160 can be a composite structure including layers with arefractive index less than the refractive index of the color filters150. In some embodiments, the low-n structure 160 can include acomposite stack including at least a metal layer 162 and a dielectriclayer 164 disposed over the metal layer 162. In some embodiments, themetal layer 142 can include W, Cu, or AlCu. The dielectric layer 164includes a material with a refractive index less than the refractiveindex of the color filter 150 or a material with a refractive index lessthan a refractive index of Si, but the disclosure is not limited tothis. Due to the low refractive index, the low-n structure 160 serves asa light guide to direct or reflect light to the color filters 150.Consequently, the low-n structure 160 effectively increases the amountof the light incident into the color filters 150. Further, due to thelow refractive index, the low-n structure 160 provides optical isolationbetween neighboring color filters 150.

Each of the color filters 150 is disposed over each of the correspondingphotodiodes 112. The color filters 150 are assigned to correspondingcolors or wavelengths of lights, and configured to filter out all butthe assigned colors or wavelengths of lights. In some embodiments, thecolor filters 150 assignments alternate between red, green, and bluelights, such that the color filters 150 include red color filters, greencolor filters and blue color filters. The red color filters, the greencolor filters and the blue color filters are arranged in a Bayer orother mosaic pattern in those embodiments that the photodiode 112 isoperated to sense visible light of incident light. In some embodiments,the color filters 150 are assigned to infrared radiation when thephotodiode 112 is operated to sense IR and/or NIR of the incident light.

In some embodiments, a plurality of micro-lens 152 corresponding to thepixel sensors 110 is disposed over the color filters 150. It should beeasily understood that locations and areas of each micro-lens 152correspond to those of the color filter 150 as shown in FIG. 4.

Referring to FIGS. 4 and 5, in some embodiments, the BSI image sensor100 includes the plurality of pixel sensor 110 as mentioned above. Moreimportantly, the first reflective structure 140 (including theconductive structure(s) 142 and the conductive feature 144), theisolation structure 120, and the low-n structure 160 form a reflectivegrid 180, and the reflective grid penetrates the substrate 102 from thefront side 102F to the back side 102B as shown in FIGS. 4 and 5. Thepixel sensors 110 are disposed within the reflective grid 180 andseparated from each other by the reflective grid 180. Accordingly, theincident light is condensed to by the micro-lens 152 over each colorfilter 150 and then converged to the color filter 150. Further, theincident light passing the color filter 150 is directed or reflectedback to the pixel sensor 110 by the low-n structure 160 of thereflective grid 180, the incident light passing the substrate 102 isdirected or reflected back to the photodiode 112 by the isolationstructure 120 of the reflective grid 180, and the incident light passingthe interconnection structure 130 is directed or reflected back to thepixel sensor 110 by the first reflective structure 140 of the reflectivegrid 180. In other words, light leaking to neighboring pixel sensors 110is blocked and consequently cross talk between neighboring pixel sensors110 is mitigated.

FIGS. 6 through 8 are plan views of a pixel sensor 110 of a BSI imagesensor 100 a according to aspects of the present disclosure in someembodiments, FIG. 9 is a cross-sectional view of the pixel sensor 110 ofthe BSI image sensor 100 a taken along line B-B′ of FIGS. 6-8, and FIG.10 a cross-sectional view of a portion of the BSI image sensor 100 aaccording to aspects of the present disclosure in some embodiments. Itshould be easily understood that same elements in FIGS. 1-10 aredesignated by the same numerals, details of those same elements areomitted in the interest of brevity. As shown in FIGS. 6 through 9, theBSI image sensor 100 a includes a substrate 102, and the substrate 102has a front side 102F and a back side 102B opposite to the front side102F. The BSI image sensor 100 includes a plurality of pixel sensors 110typically arranged within an array. Each of the pixel sensors 110includes a light-sensing device such as a photodiode 112 configured toaccumulate charge (e.g. electrons) from photons incident thereon.Further, logic devices, such as transistor 114, can be disposed over thesubstrate 102 on the front side 102F configured to enable readout of thephotodiodes 112. The pixel sensor 110 is disposed to receive light witha predetermined wavelength. Therefore the photodiode 112 is operated tosense visible light of incident light in some embodiments. Or, thephotodiode 112 is operated to sense IR and/or NIR of the incident lightin some embodiments.

An isolation structure 120 such as a DTI structure is disposed in thesubstrate 102 as shown in FIGS. 6-9. In some embodiments, the isolationstructure 120 can include a coating 122 (shown in FIG. 9) and aninsulating material 124 (shown in FIG. 9). The isolation structure 120provides optical isolation between neighboring pixel sensors 110 andphotodiodes 112, thereby serving as a substrate isolation grid andreducing cross-talk. A BEOL metallization stack 130 is disposed over thesubstrate 102 on the front side 102F. The BEOL metallization stack 130includes a plurality of metallization layers including conductivecontacts/vias 132 and conductive features 134 stacked in an ILD layer136 (all shown in FIGS. 9-10). One or more contacts 132 of the BEOLmetallization stack 130 is electrically connected to the logic devices,and one or more conductive vias 132 is electrically connected toconductive features 134 of different layers.

Referring to FIGS. 6-9, each pixel sensor 110 of the BSI image sensor100 a includes a plurality of conductive structures 142 disposed in thedielectric layer 136 of the interconnection structure 130. Theconductive structures 142 are arranged to align with the isolationstructure 120. As mentioned above, the conductive structures 142 canentirely overlap the isolation structure 120 in a plan view as shown inFIGS. 6-8, but the disclosure is not limited to this. The conductivestructures 142 include conductive contacts, and can be referred to asthe V0 vias in some embodiments. In some embodiments, the conductivestructures 142 contact the isolation structure 120, as shown in FIG. 9.Referring to FIGS. 6 and 9, in some embodiments, the conductivestructures 142 includes discrete dot-like structures 142 a disposed inthe interconnection structure 130 and arranged along the isolationstructure 120 in a plan view, as shown in FIG. 6. It should beunderstand that parameters of the dot-like structures 142 a can be thesame with those described above, therefore those details are omitted forsimplicity. Referring to FIGS. 7 and 9, in some embodiments, theconductive structures 142 includes discrete bar-like structures 142 bdisposed in the interconnection structure 130, as shown in FIG. 7. Itshould be understand that parameters of the bar-like structures 142 bcan be the same with those described above, therefore those details areomitted for simplicity. Referring to FIGS. 8 and 9, in some embodiments,the conductive structures 142 include bar-like structures, and thebar-like structures are in contact with each other to form a frame-likestructure 142 c as shown in FIG. 8. It should be understand thatparameters of the frame-like structures 142 c can be the same with thosedescribed above, therefore those details are omitted for simplicity.

Still referring to FIGS. 6-9, each of the pixel sensors 110 furtherincludes a conductor 144 disposed in the dielectric layer 136 of theinterconnection structure 130. The conductor 144 is arranged to alignwith the isolation structure 120. As mentioned above, the conductor 144can entirely overlap both of the conductive structures 142 and theisolation structure 120 in a plan view as shown in FIGS. 6-8, but thedisclosure us not limited to this. The conductor 144 can be referred toas the M1 feature in some embodiments, but the disclosure is not limitedto this. Further, as shown in FIG. 9, the conductive structures 142 areall disposed between the isolation structure 120 and the conductor 144.More importantly, the conductor 144 and the conductive structures 142form a first reflective structure 140 disposed in the interconnectionstructure 130. And the first reflective structure 140 is arranged toalign with the isolation structure 120, as shown in FIGS. 6-9. Forexample, the first reflective structure 140 can entirely overlap theisolation structure 120, but the disclosure us not limited to this.Since the diameter D or the width W1 of the conductive structures 142 isless than a width W2 of the conductive feature 144, the width of thefirst reflective structure 140 is less than the width Wd of theisolation structure 120. In some embodiments, the first reflectivestructure 140 is electrically isolated from other elements, but thedisclosure is not limited to this.

In some embodiments, each of the pixel sensors 110 further includes asecond reflective structure 170 disposed in the interconnectionstructure 130 over the front side 102F, and overlapping at least aportion of the pixel sensor 110. As shown in FIGS. 6-9, the secondreflective structure 170 at least overlaps the photodiode 112 of thepixel sensor 110. In some embodiments, the second reflective structure170 can be the M1 feature. In other words, the second reflectivestructure 170 and the conductive feature 144 of the first reflectivestructure 140 are formed in the same layer and may include the samematerial. However, the first reflective structures 140 are electricallyisolated from the second reflective structure 170, as shown in FIGS.6-9. In some embodiments, the second reflective structure 170 iselectrically isolated from not only the first reflective structure 170,but also other elements. However in some embodiments, the secondreflective structure 170 is electrically grounded through theinterconnection structure 130, as shown in FIG. 10.

As mentioned above, each of the pixel sensors 110 includes a pluralityof micro structures 116 disposed over the substrate 102 on the back side102B as shown in FIG. 9. In some embodiments, an ARC 118 a and adielectric layer 118 b are disposed over the micro structures 130 on theback side 102B of the substrate 102. In some embodiments, a plurality ofcolor filters 150 (shown in FIG. 9) corresponding to the pixel sensors110 is disposed over the pixel sensors 110 on the back side 102B of thesubstrate 102. Further, a low-n structure 160 is disposed between thecolor filters 150 in some embodiments. As mentioned above, the low-nstructure 160 includes a grid structure and the color filters 150 arelocated within the grid. Thus the low-n structure 160 surrounds eachcolor filter 150, and separates the color filters 150 from each other asshown in FIG. 9. The low-n structure 160 can be a composite structureincluding layers with a refractive index less than the refractive indexof the color filters 150. In some embodiments, the low-n structure 160can include a composite stack including at least a metal layer 162 and adielectric layer 164 disposed over the metal layer 162.

In some embodiments, a plurality of micro-lens 152 corresponding to thepixel sensors 110 is disposed over the color filters 150. It should beeasily understood that locations and areas of each micro-lens 152correspond to those of the color filter 150 as shown in FIG. 9.

Referring to FIGS. 9 and 10, in some embodiments, the BSI image sensor100 a includes the plurality of pixel sensor 110 as mentioned above.More importantly, the first reflective structure 140 (including theconductive structure(s) 142 and the conductive feature 144), theisolation structure 120, and the low-n structure 160 form a reflectivegrid 180, and the reflective grid penetrates the substrate 102 from thefront side 102F to the back side 102B as shown in FIGS. 9 and 10. Thepixel sensors 110 are disposed within the reflective grid 180 andseparated from each other by the reflective grid 180. Accordingly, theincident light is condensed to by the micro-lens 152 over each colorfilter 150 and then converged to the color filter 150. Further, theincident light passing the color filter 150 is directed or reflectedback to the pixel sensor 110 by the low-n structure 160 of thereflective grid 180, the incident light passing the substrate 102 isdirected or reflected back to the photodiode 112 by the isolationstructure 120 of the reflective grid 180, and the incident light passingthe interconnection structure 130 is directed or reflected back to thepixel sensor 110 by the first reflective structure 140 of the reflectivegrid 180. In other words, light leaking to neighboring pixel sensors 110is blocked and consequently cross talk between neighboring pixel sensors110 is mitigated. Further, the incident light reaching theinterconnection structure 130 is further reflected back to thephoto-sensing region 112 by the second reflective structure 170, andthus more light can be absorbed by the photodiode 112. Accordingly,light is trapped in the pixel sensors 110, and thus quantum efficiency(QE) is improved.

In the present disclosure, a BSI image sensor including a reflectivegrid is provided. The reflective grid can include the low-n structureseparating the color filters and the isolation structure separating thephoto-sensing regions. More importantly, the reflective grid includesthe first reflective structure and the second reflective structureformed in the interconnection structure. The first reflective structurereduces light entering to neighboring pixel sensor and the secondreflective structure reflects light back to the photodiode. Accordingly,cross talk is reduced and sensitivity of the pixel sensor is improved.Additionally, since the first reflective structures and the secondreflective structures can be formed in the interconnection structure,the provided BSI image sensor is compatible with existing CISfabrication without developing extra operations.

In some embodiments, a BSI image sensor is provided. The BSI imagesensor includes a substrate including a front side and a back sideopposite to the front side, a pixel sensor disposed in the substrate, anisolation structure surrounding the pixel sensor and disposed in thesubstrate, a dielectric layer disposed over the pixel sensor on thefront side of the substrate, and a plurality of conductive structuresdisposed in the dielectric layer and arranged to aligned with theisolation structure.

In some embodiments, a BSI image sensor is provided. The BSI imagesensor includes a substrate including a front side and a back sideopposite to the front side, a pixel sensor disposed in the substrate, anisolation structure surrounding the pixel sensor and disposed in thesubstrate, an interconnection structure disposed over the substrate onthe front side, and a first reflective structure disposed in theinterconnection structure and aligned to the isolation structure.

In some embodiments, a BSI image sensor is provided. The BSI imagesensor includes a substrate including a front side and a back sideopposite to the front side, a plurality of pixel sensors disposed in thesubstrate, and a reflective grid penetrating the substrate from thefront side to the back side. The pixel sensors are disposed within thereflective grid and separated from each other by the reflective grid.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A back side illumination (BSI) image sensor comprising: a substratecomprising a front side and a back side opposite to the front side; apixel sensor in the substrate; an isolation structure surrounding thepixel sensor in the substrate; a dielectric layer over the pixel sensoron the front side of the substrate; and a plurality of conductivestructures disposed in the dielectric layer and arranged to align withthe isolation structure.
 2. The BSI image sensor of claim 1, wherein thepixel sensor is disposed to receive light with a predeterminedwavelength.
 3. The BSI image sensor of claim 2, wherein the conductivestructures are spaced apart from each other by the dielectric layer, anda spacing distance between the conductive structures is less than a halfof the predetermined wavelength.
 4. The BSI image sensor of claim 3,wherein the spacing distance is less than 0.5 micrometers (μm).
 5. TheBSI image sensor of claim 3, wherein each of the conductive structurescomprises a diameter, and the diameter is between about 0.05 μm andabout 0.2 μm.
 6. The BSI image sensor of claim 3, wherein each of theconductive structures comprises a bar-like structure spaced apart fromeach other by the dielectric layer.
 7. The BSI image sensor of claim 1,wherein the conductive structures are contact with each other to form aframe-like structure in the dielectric layer.
 8. A back sideillumination (BSI) image sensor comprising: a substrate comprising afront side and a back side opposite to the front side; a pixel sensor inthe substrate; an isolation structure surrounding the pixel sensor inthe substrate; an interconnection structure over the substrate on thefront side; and a first reflective structure disposed in theinterconnection structure and aligned to the isolation structure.
 9. TheBSI image sensor of claim 8, wherein a width of the first reflectivestructure is less than a width of the isolation structure.
 10. The BSIimage sensor of claim 8, wherein the first reflective structurecomprises a plurality of first conductive contact and a first conductor,and the first conductive contacts are disposed between the firstconductor and isolation structure.
 11. The BSI image sensor of claim 10,wherein a width of the first conductive contacts is less than a width ofthe first conductor.
 12. The BSI image sensor of claim 10, wherein thefirst conductive contacts contact the isolation structure.
 13. The BSIimage sensor of claim 8, further comprising a second reflectivestructure disposed in the interconnection structure and overlapping atleast a portion of the pixel sensor.
 14. The BSI image sensor of claim13, wherein the first reflective structures are electrically isolatedfrom the second reflective structure.
 15. The BSI image sensor of claim13, wherein the second reflective structure is electrically grounded.16. The BSI image sensor of claim 8, wherein the interconnectionstructure further comprises a plurality of second conductive contactsand a plurality of second conductive features.
 17. A back sideillumination (BSI) image sensor comprising: a substrate comprising afront side and a back side opposite to the front side; a plurality ofpixel sensors in the substrate, and a reflective grid penetrating thesubstrate from the front side to the back side, wherein the pixelsensors are disposed within the reflective grid and separated from eachother by the reflective grid.
 18. The BSI image sensor of claim 17,wherein the reflective gird comprises: a substrate isolation structuresurrounding and between the pixel sensors in the substrate; a firstreflective structure disposed over the substrate on the front side andaligned with the isolation structure; and a low-n structure disposedover the substrate on the back side and aligned with the isolationstructure.
 19. The BSI image sensor of claim 18, further comprising aplurality of color filters disposed within the low-n structure over thesubstrate on the back side.
 20. The BSI image sensor of claim 17,further comprising a plurality of second reflective structures disposedover the pixel sensors on the front side, and